HPE 512GB 2666 Persistent Memory Kit 835810-B21

SKU : 835810-B21
Availablity : on order
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512GB PC4-21300 DDR4-2666 Optane DC Persistent Memory Module from HPE, featuring Intel Optane Technology and 3D XPoint Technology with a built-in heatsink, ideal for data center applications.
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$28,596.00

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Product Description

Manufacture: HPE | Model: 835810-B21

 

The 512GB PC4-21300 DDR4-2666 Optane DC Persistent Memory Module by HPE is designed for high-performance data center applications. Utilizing Intel Optane Technology and 3D XPoint technology, this memory module offers fast data access and improved reliability, which are essential for modern, data-driven workloads. With a storage capacity of 512GB, this module provides ample space for demanding applications, enabling enterprise servers to handle large volumes of data efficiently. The integration of a heatsink helps maintain optimal performance by preventing overheating during intensive use.

This memory module operates at a speed of 2666 MHz DDR4 (PC4-21300), delivering reliable and quick data transfer speeds for enterprise-level systems. The 1.2V voltage ensures energy efficiency without compromising the power needed for high-performance operations. The 288-pin DDR-T DIMM architecture supports the data needs of servers in cloud, enterprise, and data center environments, where performance, persistence, and scalability are critical. The product is ideal for systems that require persistent memory to boost efficiency and workload management. HPE’s durable design and advanced technology ensure this memory module will meet the rigorous demands of modern IT infrastructures.

 

Key Features:

  • 512GB storage capacity for large-scale data management
  • Memory speed of 2666 MHz DDR4 (PC4-21300) for efficient data processing
  • Intel Optane Technology with 3D XPoint for fast and reliable access
  • Heatsink included for enhanced heat dissipation
  • Low voltage of 1.2V for energy-efficient performance
  • Supports DDR-T DIMM 288-Pin architecture for data center applications
  • Optimized for data centers and persistent memory workloads
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